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Silicon, 14 Si Silicon Pronunciation Appearance crystalline, reflective with bluish-tinged faces Standard atomic weight A r, std (Si) [[[:Template:Val]], Template:Val ] conventional: Template:Val Silicon in the periodic table
Atomic number (Z ) 14 Group group 14 (carbon group) Period period 3 Block p-block Electron configuration [Ne ] 3s2 3p2 Electrons per shell 2, 8, 4 Physical properties Phase at STP solid Melting point 1687 K (1414 °C, 2577 °F) Boiling point 3538 K (3265 °C, 5909 °F) Density (near r.t. ) 2.3290 g/cm3 when liquid (at m.p. ) 2.57 g/cm3 Heat of fusion 50.21 kJ/mol Heat of vaporization 383 kJ/mol Molar heat capacity 19.789 J/(mol·K) Vapor pressure
P (Pa)
1
10
100
1 k
10 k
100 k
at T (K)
1908
2102
2339
2636
3021
3537
Atomic properties Oxidation states −4 , −3, −2, −1, 0,[1] +1,[2] +2, +3, +4 (an amphoteric oxide)Electronegativity Pauling scale: 1.90 Ionization energies 1st: 786.5 kJ/mol 2nd: 1577.1 kJ/mol 3rd: 3231.6 kJ/mol (more ) Atomic radius empirical: 111 pm Covalent radius 111 pm Van der Waals radius 210 pm Spectral lines of siliconOther properties Natural occurrence primordial Crystal structure face-centered diamond-cubic Speed of sound thin rod 8433 m/s (at 20 °C) Thermal expansion 2.6 µm/(m·K) (at 25 °C) Thermal conductivity 149 W/(m·K) Electrical resistivity 2.3× 103 Ω·m (at 20 °C)[3] Band gap 1.12 eV (at 300 K) Magnetic ordering diamagnetic [4] Magnetic susceptibility −3.9·10−6 cm3 /mol (298 K)[5] Young's modulus 130–188 GPa[6] Shear modulus 51–80 GPa[6] Bulk modulus 97.6 GPa[6] Poisson ratio 0.064–0.28[6] Mohs hardness 6.5 CAS Number 7440-21-3 History Naming after Latin 'silex' or 'silicis', meaning flint Prediction Antoine Lavoisier (1787) Discovery and first isolationJöns Jacob Berzelius [7] [8] (1823)Named by Thomas Thomson (1817) Main isotopes of silicon
Category: Silicon | references
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References
These references will appear in the article, but this list appears only on this page.
↑ "New Type of Zero-Valent Tin Compound" . Chemistry Europe . 27 August 2016.
↑ Ram, R. S.; et al. (1998). "Fourier Transform Emission Spectroscopy of the A2D–X2P Transition of SiH and SiD" (PDF) . J. Mol. Spectr . 190 (2): 341–352. doi :10.1006/jmsp.1998.7582 . PMID 9668026 .
↑ Eranna, Golla (2014). Crystal Growth and Evaluation of Silicon for VLSI and ULSI . CRC Press. p. 7. ISBN 978-1-4822-3281-3 .
↑ Magnetic susceptibility of the elements and inorganic compounds , in Template:RubberBible86th
↑ Weast, Robert (1984). CRC, Handbook of Chemistry and Physics . Boca Raton, Florida: Chemical Rubber Company Publishing. pp. E110. ISBN 0-8493-0464-4 .
↑ 6.0 6.1 6.2 6.3 Hopcroft, Matthew A.; Nix, William D.; Kenny, Thomas W. (2010). "What is the Young's Modulus of Silicon?" . Journal of Microelectromechanical Systems . 19 (2): 229. doi :10.1109/JMEMS.2009.2039697 .
↑ Weeks, Mary Elvira (1932). "The discovery of the elements: XII. Other elements isolated with the aid of potassium and sodium: beryllium, boron, silicon, and aluminum". Journal of Chemical Education . 9 (8): 1386–1412. Bibcode :1932JChEd...9.1386W . doi :10.1021/ed009p1386 .
↑ Voronkov, M. G. (2007). "Silicon era". Russian Journal of Applied Chemistry . 80 (12): 2190. doi :10.1134/S1070427207120397 .
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